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DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG2021M16
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
* The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz * Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz * High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V * 6-pin lead-less minimold (M16, 1208 PKG)
ORDERING INFORMATION
Part Number NESG2021M16 Order Number NESG2021M16-A Package 6-pin lead-less minimold (M16, 1208 PKG) NESG2021M16-T3 NESG2021M16-T3-A (Pb-Free) Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form * 8 mm wide embossed taping * Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
2
Symbol VCBO VCEO VEBO IC Ptot
Note
Ratings 13.0 5.0 1.5 35 175 150 -65 to +150
Unit V V V mA mW C C
Tj Tstg
Note Mounted on 1.08 cm x 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. PU10393EJ03V0DS (3rd edition) Date Published September 2009 NS Printed in Japan
The mark shows major revised points.
2003, 2009
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
NESG2021M16
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure (1) Noise Figure (2) Associated Gain (1) Associated Gain (2) Reverse Transfer Capacitance Maximum Stable Power Gain Gain 1 dB Compression Output Power fT S21e NF NF Ga Ga Cre
Note 2 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
ICBO IEBO hFE
Note 1
VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 2 V, IC = 5 mA
- - 130
- - 190
100 100 260
nA nA -
VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 2 V, IC = 3 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 3 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 3 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 3 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt VCB = 2 V, IE = 0 mA, f = 1 MHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC (set) = 12 mA (RF OFF), f = 2 GHz, ZS = ZSopt, ZL = ZLopt
20 17.0 - - 15.0 - - 20.0 - -
25 19.0 0.9 1.3 18.0 10.0 0.1 22.5 9
- - 1.2 - - - 0.2 - - -
GHz dB dB dB dB dB pF dB dBm
MSG
Note 3
PO (1 dB)
Output 3rd Order Intercept Point
OIP3
VCE = 3 V, IC (set) = 12 mA (RF OFF), f = 2 GHz, ZS = ZSopt, ZL = ZLopt
17
dBm
Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12
hFE CLASSIFICATION

Rank Marking hFE Value FB/YFB zE 130 to 260
2
Data Sheet PU10393EJ03V0DS
NESG2021M16

TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
Total Power Dissipation Ptot (mW)
REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance Cre (pF)
300 250 200
175
Mounted on Glass Epoxy PCB (1.08 cm2 x 1.0 mm (t) )
0.3 f = 1 MHz
0.2
150 100 50
0.1
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature TA (C)
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100 10 1 0.1 0.01 VCE = 1 V
Collector Current IC (mA)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100 10 1 0.1 0.01 VCE = 2 V
Collector Current IC (mA)
0.001
0.001
0.0001 0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0001 0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100 10 1 0.1 0.01 VCE = 3 V
Collector Current IC (mA)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
35 30 25 20 15 10 5 IB = 20 A 200 A 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A
Collector Current IC (mA)
0.001
0.0001 0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10393EJ03V0DS
3
NESG2021M16
DC CURRENT GAIN vs. COLLECTOR CURRENT
1 000 VCE = 1 V 1 000 VCE = 2 V
DC CURRENT GAIN vs. COLLECTOR CURRENT
DC Current Gain hFE
100
DC Current Gain hFE
100
10 0.1
1
10
100
10 0.1
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
DC CURRENT GAIN vs. COLLECTOR CURRENT
1 000 VCE = 3 V
DC Current Gain hFE
100
10 0.1
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10393EJ03V0DS
NESG2021M16
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
30
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
30
Gain Bandwidth Product fT (GHz)
25 20 15 10 5 0 1
Gain Bandwidth Product fT (GHz)
VCE = 1 V, f = 2 GHz
VCE = 2 V, f = 2 GHz 25 20 15 10 5 0 1
10 Collector Current IC (mA)
100
10 Collector Current IC (mA)
100
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
30 35 30
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
VCE = 1 V, IC = 10 mA MSG 25 20 15 10 5 0 0.1 |S21e|2 MAG MSG MAG
Gain Bandwidth Product fT (GHz)
VCE = 3 V, f = 2 GHz 25 20 15 10 5 0 1
10 Collector Current IC (mA)
100
1
10
100
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
40 35 30 25 20 15 10 5 0 0.1 1 10 100 |S21e|2 MAG MSG MAG
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
40 35 30 25 20 15 10 5 0 0.1 1 10 100 |S21e|2 MAG MSG MSG MAG VCE = 3 V, IC = 10 mA
VCE = 2 V, IC = 10 mA
MSG
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10393EJ03V0DS
5
NESG2021M16
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
30 25 20 15
VCE = 1 V, f = 1 GHz
30 25 20 15 10 5 0
MSG
MAG
VCE = 1 V, f = 2 GHz MSG MAG
|S21e|2 10 5 0
|S21e|2
1
10 Collector Current IC (mA)
100
1
10 Collector Current IC (mA)
100
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
30 25 20 15 10 |S21e|2 5 0 VCE = 1 V, f = 5 GHz
30 25 20 15 10 5 0
VCE = 1 V, f = 3 GHz MSG MAG
MSG
MAG
|S21e|2
1
10 Collector Current IC (mA)
100
1
10 Collector Current IC (mA)
100
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
30 25 20 15 10 5 0 |S21e|2 VCE = 2 V, f = 2 GHz
30 25 20 15 10 5 0
VCE = 2 V, f = 1 GHz
MSG
MAG
MSG
MAG
|S21e|2
1
10 Collector Current IC (mA)
100
1
10 Collector Current IC (mA)
100
Remark The graphs indicate nominal characteristics.
6
Data Sheet PU10393EJ03V0DS
NESG2021M16
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
30 25 20 15
VCE = 2 V, f = 3 GHz MSG MAG
30 25 20 15 10
VCE = 2 V, f = 5 GHz
MSG
MAG
|S21e|2 10 5 0
|S21e|2 5 0
1
10 Collector Current IC (mA)
100
1
10 Collector Current IC (mA)
100
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
30 25 20 15 10 5 0
VCE = 3 V, f = 1 GHz
MSG
MAG
30 25 20 15 10 5 0
VCE = 3 V, f = 2 GHz
MSG
MAG
|S21e|2
|S21e|2
1
10 Collector Current IC (mA)
100
1
10 Collector Current IC (mA)
100
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
30 25 20 15 10 5 0 VCE = 3 V, f = 5 GHz
30 25 20 15 10 5 0
VCE = 3 V, f = 3 GHz MSG MAG
MSG
MAG
|S21e|2
|S21e|2
1
10 Collector Current IC (mA)
100
1
10 Collector Current IC (mA)
100
Remark The graphs indicate nominal characteristics.
Data Sheet PU10393EJ03V0DS
7
NESG2021M16
OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER
20 VCE = 3 V, f = 1 GHz, Icq = 12 mA
Collector Current IC (mA) Output Power Pout (dBm)
OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER
50 20 VCE = 3 V, f = 2 GHz, Icq = 12 mA 15 Pout 10 30
Collector Current IC (mA) Collector Current IC (mA) Output Power Pout (dBm)
50
15 Pout 10
40
40
30
5 IC 0 -5 -25
20
5 IC 0 -5 -20
20
10
10
-20
-15
-10
-5
0 0
-15
-10
-5
0
0 5
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER
20 VCE = 3 V, f = 3 GHz, Icq = 12 mA
Output Power Pout (dBm) Output Power Pout (dBm)
OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER
50 20 VCE = 3 V, f = 5.2 GHz, Icq = 12 mA
Collector Current IC (mA)
50
15 Pout
40
15
40
10
30
10
Pout
30
5 IC 0 -5 -20
20
5 IC
20
10
0 -5 -15
10
-15
-10
-5
0
0 5
-10
-5
0
5
0 10
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
8
Data Sheet PU10393EJ03V0DS
NESG2021M16
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
5 4 30 5 4 Ga
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
30
Associated Gain Ga (dB)
Noise Figure NF (dB)
3
Noise Figure NF (dB)
Ga
20
3
20
2 NF VCE = 1 V, f = 1 GHz 1 10 Collector Current IC (mA)
15
2
15
1
10 5 100
1
NF
10 VCE = 2 V, f = 1 GHz 5 100
0
0
1
10 Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
6 5 30 25 Ga 20 15 10 5 NF 10 Collector Current IC (mA) VCE = 1 V, f = 2 GHz 0 100 6 5
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
30 25 Ga 20 15 10 5 NF 10 Collector Current IC (mA) VCE = 2 V, f = 2 GHz 0 100
Associated Gain Ga (dB)
4 3 2 1 0
4 3 2 1 0
1
1
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
10 VCE = 1 V, f = 5.2 GHz 8 25 10 8
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
25 VCE = 2 V, f = 5.2 GHz
Associated Gain Ga (dB)
6 Ga 4
15
6 Ga 4
15
10
10
2 NF 0 1 10 Collector Current IC (mA)
5 0 100
2
NF
5 0 100
0
1
10 Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10393EJ03V0DS
Associated Gain Ga (dB)
Noise Figure NF (dB)
Noise Figure NF (dB)
20
20
Associated Gain Ga (dB)
Noise Figure NF (dB)
Noise Figure NF (dB)
Associated Gain Ga (dB)
25
25
9
NESG2021M16
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
5 4
Noise Figure NF (dB)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
30 6 5
Noise Figure NF (dB)
30 25 Ga 20 15 10 5 NF 10 Collector Current IC (mA) VCE = 3 V, f = 2 GHz 0 100
Ga
Associated Gain Ga (dB)
4 3 2 1 0
3
20
2
15
1
NF VCE = 3 V, f = 1 GHz
10 5 100
0
1
10 Collector Current IC (mA)
1
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
10 8
Noise Figure NF (dB)
25
6 Ga 4
15
10
2 NF 0 1 10 Collector Current IC (mA) VCE = 3 V, f = 5.2 GHz
5 0 100
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.necel.com/microwave/en/
10
Data Sheet PU10393EJ03V0DS
Associated Gain Ga (dB)
20
Associated Gain Ga (dB)
25
NESG2021M16
PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm)
1.00.05 0.8+0.07 -0.05
0.4
1.2+0.07 -0.05
2
0.8
0.4
3
0.50.05
4
5
PIN CONNECTIONS
1. 2. 3. 4. 5. 6. Collector Emitter Emitter Base Emitter Emitter
Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical performance and heat sinking.
0.125+0.1 -0.05
0.150.05
1
6
Data Sheet PU10393EJ03V0DS
zE
11
NESG2021M16
* The information in this document is current as of September, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC Electronics products are not taken measures to prevent radioactive rays in the product design. When customers use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in order to avoid risks of the damages to property (including public or social property) or injury (including death) to persons, as the result of defects of NEC Electronics products. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
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